Centro de Componentes Semicondutores
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Centro de Componentes Semicondutores
  • Home
    • History
  • Getting started
    • Entry form
  • Facilities
  • Users
  • Staff
  • Education
  • Booking
  • News
  • Webmail
  • Home
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  • Etching
  • ICP-RIE

ICP-RIE

photo ICP_cc

Equipment: Oxford Plasmalab 100 (external link) – Grant: Fapesp (Proc: 2012/17610-3)

Manager: Fred Cioldin

Backup:

Description:  ICP-RIE (Reactive Ion Inductively Coupled Plasma Etching) is a device for dry corrosion assisted by plasma. Currently the equipment installed in the CCS is capable for Si and SiNx etching. The Plasma-100 have a load-lock for sample transfer to the main chamber and is equipped with a He back cooling that allows control of the electrode temperature.

Resources: 

Fluroinated gases:  SF6, C4F8, CF4, CHF3;

Other gases: Ar, O2, H2, Cl2;

Materials: Si, SiNx, SiOx;

Restrictions: See usage rules (in Portuguese);

MSDS: C4F8, CF4, CH4, CHF3, CL2

Other informations: Plasma-100

Notícias

  • November 2016
  • April 2013
  • September 2012

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